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NTLTD7900ZR2
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage (Note 2)
(V GS = 0 Vdc, I D = 250 m Adc)
Zero Gate Voltage Drain Current
(V DS = 16 Vdc, V GS = 0 Vdc)
(V DS = 16 Vdc, V GS = 0 Vdc, T J = 85 ° C)
Gate--Body Leakage Current
(V GS = ? 4.5 Vdc, V DS = 0 Vdc)
(V GS = ? 12 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
20
--
--
--
--
24
--
--
--
--
--
1.0
20
1.0
500
Vdc
m Adc
m Adc
m Adc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V DS = V GS , I D = 250 m Adc)
Static Drain--to--Source On--Resistance (Note 2)
(V GS = 4.5 Vdc, I D = 6.5 Adc)
(V GS = 2.5 Vdc, I D = 5.8 Adc)
V GS(th)
R DS(on)
0.4
--
--
0.67
21
27
1.0
26
31
Vdc
m Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
--
7.4
15
pF
Output Capacitance
(V DS = 16 Vdc, V GS = 0 V,
f = 1.0 MHz)
C oss
--
237
400
Transfer Capacitance
C rss
--
4.1
10
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn--On Delay Time
t d(on)
--
0.55
1.0
m s
Rise Time
Turn--Off Delay Time
(V GS = 4.5 Vdc, V DD = 10 Vdc,
I D = 1.0 Adc, R G = 9.1 Ω )
(Note 2)
t r
t d(off)
--
--
1.17
1.87
2.0
3.0
Fall Time
t f
--
4.8
7.0
m s
Gate Charge
Gate Charge
(V GS = 4.5 Vdc, I D = 6.5 Adc,
V DS = 10 Vdc)
(Note 2)
Q T
Q 1
Q 2
--
--
--
12
0.7
3.7
18
--
--
nC
nC
SOURCE--DRAIN DIODE CHARACTERISTICS
Forward On--Voltage
(I S = 1.0 Adc, V GS = 0 Vdc)
I S = 1.0 Adc, V GS = 0 Vdc, T J = 85 ° C)
(Note 2)
V SD
--
--
0.69
0.62
0.8
--
Vdc
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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